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参数资料
| 型号： | MJD117I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 81K |
| 代理商： | MJD117I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD117
PNP Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 100
V
VCEO
Collector-Emitter Voltage
- 100
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 2
A
ICP
Collector Current (Pulse)
- 4
A
IB
Base Current
- 50
mA
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO (sus)
*Collector-Emitter Sustaining Voltage
IC = - 30mA, IB = 0
- 100
V
ICEO
Collector Cut-off Current
VCE = - 50V, IB = 0
- 20
A
ICBO
Collector Cut-off Current
VCB = - 100V, IE = 0
- 20
A
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 2
mA
hFE
*DC Current Gain
VCE = - 3V, VEB = - 0.5A
VCE = - 3V, VEB = - 2A
VCE = - 3V, IC = - 4A
500
1000
200
12K
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = -2A, IB = - 8mA
IC = - 4A, IB = - 40mA
- 2
- 3
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = - 4A, IB = - 40mA
- 4
V
VBE(on)
*Base-Emitter ON Voltage
VCE = - 3A, IC = - 2A
- 2.8
V
fT
Current Gain Bandwidth Product
VCE = -10V, IC = - 0.75A
25
MHz
Cob
Output Capacitance
VCB = - 10V, IE = 0
f= 0.1MHz
200
pF
MJD117
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP117
R110k
R20.6k
Equivalent Circuit
B
E
C
R1
R2
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD117-I | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD117ITU | 功能描述:两极晶体管 - BJT PNP Si Transistor Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD117L | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD117RLG | 功能描述:达林顿晶体管 BIP DPAK PNP 2A 100V TR RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117T4 | 功能描述:达林顿晶体管 PNP Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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