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参数资料
| 型号： | MJD117I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 81K |
| 代理商： | MJD117I |
Product Folder - Fairchild P/N MJD117 - PNP Silicon Darlington Transistor
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MJD117
PNP Silicon Darlington Transistor
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Contents
Features
D-PAK for Surface Mount Applications
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High DC Current Gain
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Built-in a Damper Diode at E-C
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Lead Formed for Surface Mount
Applications (No Suffix)
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Straight Lead (I-PAK, "-I" Suffix)
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Electrically Similar to Popular TIP117
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Datasheet
This pagePrint version
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
MJD117TF
Full Production
$0.349
TO-252(DPAK)
2
TAPE REEL
* 1,000 piece Budgetary Pricing
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file:///C|/shj/MJD117.html [Jul-26-2002 3:15:37 PM]
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| MJD127-1 | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD117-I | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD117ITU | 功能描述:两极晶体管 - BJT PNP Si Transistor Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD117L | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD117RLG | 功能描述:达林顿晶体管 BIP DPAK PNP 2A 100V TR RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117T4 | 功能描述:达林顿晶体管 PNP Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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