- 您现在的位置：买卖IC网 > PDF目录95947 > MJD122I (FAIRCHILD SEMICONDUCTOR CORP) 8 A, 100 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MJD122I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 80K |
| 代理商： | MJD122I |
Product Folder - Fairchild P/N MJD122 - NPN Silicon Darlington Transistor
space
SEARCH | Parametric | Cross Reference
space
Product Folders and
Datasheets
Application
notes
space
Home >> Find products >>
space
MJD122
NPN Silicon Darlington Transistor
Related Links
Dotted line
Dotted line
Dotted line
Dotted line
Dotted line
Dotted line
Contents
Features
D-PAK for Surface Mount Applications
q
High DC Current Gain
q
Built-in a Damper Diode at E-C
q
Lead Formed for Surface Mount
Applications (No Suffix)
q
Straight Lead (I-PAK, "-I" Suffix)
q
Electrically Similar to Popular TIP122
q
Complement to MJD127
space
Datasheet
This pagePrint version
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
MJD122TF
Full Production
$0.336
TO-252(DPAK)
2
TAPE REEL
* 1,000 piece Budgetary Pricing
space
space
file:///C|/shj/MJD122.html [Jul-26-2002 3:12:14 PM]
GO
相关PDF资料 |
PDF描述 |
|---|---|
| MJD127-1 | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD127-I | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD13005-1 | Si, NPN, RF POWER TRANSISTOR, TO-251 |
| MJD148-1 | 4 A, 45 V, NPN, Si, POWER TRANSISTOR |
| MJD5731-1 | 1 A, 350 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD122T4 | 功能描述:达林顿晶体管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122T4G | 功能描述:达林顿晶体管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122T4G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 100V D-PAK |
| MJD122T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252 |
| MJD122TF | 功能描述:达林顿晶体管 NPN Sil Darl Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。