- 您现在的位置：买卖IC网 > PDF目录95947 > MJD2955-I (FAIRCHILD SEMICONDUCTOR CORP) 10 A, 60 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MJD2955-I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 5/6页 |
| 文件大小： | 175K |
| 代理商： | MJD2955-I |
Careers
| Sitema
Go
DATASHEETS, SAMPLES, BUY
TECHNICAL INFORMATION
APPLICATIONS
DESIGN CENTER
SUPPORT
COMPANY
INVESTORS
MY FA
Home >> Find products >>
Product status/pricing/packaging
MJD2955
PNP Epitaxial Silicon Transistor
Features
back to top
Contents
Features
Product status/pricing/packaging
Order Samples
Qualification Support
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular MJE2955T
DC Current Gain Specified to 10A
High Current Gain - Bandwidth Product: fT=2MHz (Min.), IC=-
500mA
Datasheet
Download this
datasheet
e-mail this datasheet
This page
Print version
Product
Product status
Pb-free Status
Pricing*
Package type
Leads
Packing method
Package Marking Convention**
MJD2955TF
Full Production
$0.306
TO-252(DPAK)
2
TAPE REEL
Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&4 (4-Digit Date Code)
Line 2: MJD Line 3: 2955
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
contact a Fairchild distributor to obtain samples
Indicates product with Pb-free second-level interconnect. For more information click here.
Related Links
Request samples
How to order products
Product Change Notices
(PCNs)
Support
Sales support
Quality and reliability
Design center
Page 1 of 2
Product Folder - Fairchild P/N MJD2955 - PNP Epitaxial Silicon Transistor
18-Aug-2007
mhtml:file://C:\TEMP\MJD2955TF.mht
相关PDF资料 |
PDF描述 |
|---|---|
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29C-T1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD3055-I | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD2955T4 | 功能描述:两极晶体管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD2955T4 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
| MJD2955T4G | 功能描述:两极晶体管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD2955TF | 功能描述:两极晶体管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD29C | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
发布紧急采购，3分钟左右您将得到回复。