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参数资料
| 型号： | MJD30C-I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 44K |
| 代理商： | MJD30C-I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD30/
30C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300ms, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: MJD30
: MJD30C
- 40
- 100
V
VCEO
Collector-Emitter Voltage
: MJD30
: MJD30C
- 40
- 100
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 1
A
ICP
Collector Current (Pulse)
- 3
A
IB
Base Current
- 4
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25
°C)
1.56
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
: MJD30
: MJD30C
IC = - 30mA, IB = 0
- 40
- 100
V
ICEO
Collector Cut-off Current
: MJD30
: MJD30C
VCE = - 40V, IB = 0
VCE = - 60V, IB = 0
- 50
A
ICES
Collector Cut-off Current
: MJD30
: MJD30C
VCE = - 40V, VBE = 0
VCE = 100V, VBE = 0
- 20
A
IEBO
Emitter Cut-off Current
VBE = - 5V, IC = 0
- 1
mA
hFE
* DC Current Gain
VCE = - 4V, IC = - 0.2A
VCE = - 4V, IC = - 1A
40
15
75
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 1A, IB = - 125mA
- 0.7
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 4A, IC = - 1A
- 1.3
V
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 200mA
3
MHz
MJD30/30C
General Purpose Amplifier
Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP30 and TIP30C
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
相关PDF资料 |
PDF描述 |
|---|---|
| MJD30-I | 1 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJD31C-TP | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD31CT4-A | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD31TF | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD32-I | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD30CTF | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD30TF | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD31_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD31_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
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