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参数资料
| 型号： | MJD31C-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 592K |
| 代理商： | MJD31C-TP |
Silicon
NPN epitaxial planer
Transistors
Features
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
PC
Collector Dissipation
TJ
Operating Junction Temperature
150
TSTG
Storage Temperature
-65 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=30mAdc, IB=0)
100
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1mAdc, IE=0)
100
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1mAdc, IC=0)
5
---
Vdc
ICEO
Collector Cutoff Current
(VCE=60Vdc, IB=0)
---
50
uAdc
IEBO
Emitter Cutoff Current
(VEB=5Vdc, IC=0)
---
1
mAdc
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=3Adc, IB=0.375Adc) (note 1)
---
----
1.2
Vdc
fT
Transition frequency
(VCE=10Vdc,IC=0.5Adc,fT=1KHz )
3
---
MHZ
Revision:
A
20
11/05/05
omponents
20736 Marilla
Street Chatsworth
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MCC
TM
Micro Commercial Components
www.mccsemi.com
1 of 4
MJD
31C
ICES
Collector Cutoff Current
(VCE=100Vdc, VEB=0)
(IC=3Adc, VCE=4Vdc)
VBE(on)
Base-Emitter Voltage
(IC=3Adc, VCE=4Vdc ) (note 1)
---
1.8
Vdc
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
Electrically Similar to Popular TIP31 and TIP32 Series
Designed for general purpose amplifier and low speed switching
applications.
1.25
W
---
20
uAdc
(IC=1Adc, VCE=4Vdc)
25
10
---
50
---
1.
Pulse Test: PW≤300s, Duty Cycle≤2%
Note:
Maximum Thermal Resistance: 100
oC/W Junction to Ambient
DIMENSIONS
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.087
0.094
2.20
2.40
B
0.000
0.005
0.00
0.13
C
0.026
0.034
0.66
0.86
D
0.018
0.023
0.46
0.58
E
0.256
0.264
6.50
6.70
F
0.201
0.215
5.10
5.46
G
0.190
4.83
H
0.236
0.244
6.00
6.20
J
0.386
0.409
9.80
10.40
PIN 1.
BASE
PIN 2. 4. COLLECTOR
PIN 3.
EMITTER
INCHES
O
0.043
0.051
1.10
1.30
Q
A
D
B
L
G
V
K
C
I
J
H
O
M
F
1
2
3
I
0.086
0.094
2.18
2.39
K
0.114
2.90
L
0.055
0.067
1.40
1.70
M
0.063
1.60
Q
0.000
0.012
0.00
0.30
V
0.211
5.35
DPAK
E
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
4
相关PDF资料 |
PDF描述 |
|---|---|
| MJD31CT4-A | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
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| MJD32C-I | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD31T4 | 功能描述:两极晶体管 - BJT 3A 40V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31T4G | 功能描述:两极晶体管 - BJT 3A 40V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31TF | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD32 | 制造商:Motorola Inc 功能描述: |
| MJD32/32C | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
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