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参数资料
| 型号： | MJD31C-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 592K |
| 代理商： | MJD31C-TP |
MCC
Revision:
A
20
11/05/05
TM
Micro Commercial Components
www.mccsemi.com
4
of 4
3
Device
Packing
Part Number-TP
Tape&Reel: 2.5Kpcs/Reel
Ordering Information :
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相关PDF资料 |
PDF描述 |
|---|---|
| MJD31CT4-A | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD31TF | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD32-I | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJD32C-I | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD32BT4 | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD31T4 | 功能描述:两极晶体管 - BJT 3A 40V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31T4G | 功能描述:两极晶体管 - BJT 3A 40V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31TF | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD32 | 制造商:Motorola Inc 功能描述: |
| MJD32/32C | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
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