参数资料
型号: MJD32C-1
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 3 A, 100 V, PNP, Si, POWER TRANSISTOR
封装: PLASTIC, CASE 369D-01, DPAK-3
文件页数: 4/8页
文件大小: 0K
代理商: MJD32C-1
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
4
V
CE
,COLLECT
OREMITTER
VOL
TAGE
(VOL
TS
)
5
IB, BASE CURRENT (mA)
10
20
1.2
0.4
0
50
100
200
500
2
0.8
TJ = 25°C
1.6
2
1
IC = 0.3 A
1000
Figure 7. Collector Saturation Region
300
VR, REVERSE VOLTAGE (VOLTS)
CAP
ACIT
ANCE
(pF)
Ceb
0.1
200
100
0.5
1
10
40
TJ = +25°C
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7
D = 0.5
Figure 9. Thermal Response
1 A
3 A
70
50
30
0.2 0.3
2
3
5
20 30
Ccb
0.5
0.1
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
0.1
0.05
0.01
I C
,COLLECT
OR
CURRENT
(AMPS)
10
1.5
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.01
3
150
1
0.3
0.2
3
0.05
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
7
20
70
10
TC = 25°C SINGLE PULSE
TJ = 150°C
100
ms
1ms
dc
2
0.02
0.1
0.5
2
5
Figure 10. Active Region Safe Operating Area
50
30
100
CURVES APPLY BELOW RATED VCEO
500
ms
MJD31, MJD32
MJD31C, MJD32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
相关PDF资料
PDF描述
MJD31CI 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-251
MJD31C-I 3 A, 100 V, NPN, Si, POWER TRANSISTOR
MJD31I 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251
MJD32C-TP 3 A, 100 V, PNP, Si, POWER TRANSISTOR
MJD360T4-A 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA
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