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参数资料
| 型号： | MJE13002E |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 代理商： | MJE13002E |
UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-014,B
NPN SILICON POWER TRANSISTOR
The UTC MJE13002 designed for use in high–volatge,high
speed,power switching in inductive circuit, It is particularly suited
for 115 and 220V switchmode applications such as switching
regulator’s,inverters,DC-DC converter,Motor control,
Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @Ic=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
TO-126
1
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCEO (sus)
300
V
Collector-Emitter Voltage
VCEV
600
V
Emitter Base Voltage
VEBO
9
V
Collector Current- Continuous
- Peak (1)
Ic
ICM
1.5
3
A
Base Current – Continuous
- Peak (1)
IB
IBM
0.75
1.5
A
Emitter Current – Continuous
- Peak (1)
IE
IEM
2.25
4.5
A
Total Power Dissipation @ TA=25℃
Derate above 25℃
PD
1.4
11.2
Watts
MW/℃
Total Power Dissipation @ TC=25℃
Derate above 25℃
PD
40
320
Watts
MW/℃
Operating and Storage Junction
Temperature Range
Tj , Tstg
-65 to +150
℃
THERMAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MAX
UNIT
Thermal Resistance, Junction to Case
RθJC
3.12
℃
/W
Thermal Resistance, Junction to Ambient
RθJA
89
℃
/W
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275
℃
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13002P | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13002 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13003HV | 1.5 A, 530 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13003 | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13003 | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13003 | 功能描述:两极晶体管 - BJT BIP NPN 2A 400V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE13003_06 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13003A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MJE SERIES TRANSISTORS |
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