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参数资料
型号： MJE18002AS
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 12/65页
文件大小： 409K
代理商： MJE18002AS
MJE18002 MJF18002
3–705
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VBE(sat)
—
0.825
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 125°C
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125°C
VCE(sat)
—
0.2
0.25
0.3
0.5
0.6
Vdc
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
—
11
6.0
5.0
10
—
27
17
20
8.0
20
34
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
—
13
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
35
60
pF
Input Capacitance (VEB = 8.0 V)
Cib
—
400
600
pF
Dynamic Saturation:
dt
i
d 1 0
d
IC = 0.4 A
IB1 =40mA
1.0
s
@ TC = 125°C
VCE(dsat)
—
3.5
8.0
—
Vdc
determined 1.0
s and
3.0
s after rising IB1
reach 0.9 final IB1
IB1 = 40 mA
VCC = 300 V
3.0
s
@ TC = 125°C
—
1.5
3.8
—
reach 0.9 final IB1
(see Figure 18)
IC = 1.0 A
IB1 =0 2A
1.0
s
@ TC = 125°C
—
8.0
14
—
IB1 = 0.2 A
VCC = 300 V
3.0
s
@ TC = 125°C
—
2.0
7.0
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 20 s)
Turn–On Time
IC = 0.4 Adc
IB1 = 40 mAdc
I0 2 Ad
@ TC = 125°C
ton
—
200
130
300
—
ns
Turn–Off Time
IB2 = 0.2 Adc
VCC = 300 V
@ TC = 125°C
toff
—
1.2
1.5
2.5
—
s
Turn–On Time
IC = 1.0 Adc
IB1 = 0.2 Adc
I0 5 Ad
@ TC = 125°C
ton
—
85
95
150
—
ns
Turn–Off Time
IB2 = 0.5 Adc
VCC = 300 V
@ TC = 125°C
toff
—
1.7
2.1
2.5
—
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
IC = 0.4 Adc, IB1 = 40 mAdc,
IB2 = 0.2 Adc
@ TC = 125°C
tfi
—
125
120
200
—
ns
Storage Time
@ TC = 125°C
tsi
—
0.7
0.8
1.25
—
s
Crossover Time
@ TC = 125°C
tc
—
110
200
—
ns
Fall Time
IC = 1.0 Adc, IB1 = 0.2 Adc,
IB2 = 0.5 Adc
@ TC = 125°C
tfi
—
110
120
175
—
ns
Storage Time
@ TC = 125°C
tsi
—
1.7
2.25
2.75
—
s
Crossover Time
@ TC = 125°C
tc
—
200
250
300
—
ns
Fall Time
IC = 0.4 Adc, IB1 = 50 mAdc,
IB2 = 50 mAdc
@ TC = 125°C
tfi
—
140
185
200
—
ns
Storage Time
@ TC = 125°C
tsi
—
2.2
2.5
3.0
—
s
Crossover Time
@ TC = 125°C
tc
—
140
220
250
—
ns
相关PDF资料
PDF描述
MJE18002AN 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002BA 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002BG 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002AF 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002AK 2 A, 450 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE18002D2 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJE18002G 功能描述:两极晶体管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18004 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18004D2 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18004D2G 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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