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参数资料
| 型号： | MJE271 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS |
| 中文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件页数： | 2/4页 |
| 文件大小： | 109K |
| 代理商： | MJE271 |
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage (1)
VCEO(sus)
100
—
Vdc
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current
—
0.1
mAdc
SECOND BREAKDOWN
(IC = 20 mAdc, VCE = 3.0 Vdc)
Collector–Emitter Saturation Voltage
VCE(sat)
500
—
Vdc
Base–Emitter On Voltage
(IC = 120 mAdc, VCE = 10 Vdc)
—
—
3.0
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%.
(2) fT =
hfe
ftest.
fT
6.0
—
MHz
I
10,000
7000
5000
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
100
0.015
0.05
0.3
1.0
1.5
1000
700
500
Figure 2. Safe Operating Area
h
300
VCE = 3.0 V
150
°
C
25
°
C
3000
0.1
0.7
0.03
0.07
0.5
–55
°
C
10
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
100
5.0
0.1
0.05
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
7.0
10
dc
1.0
0.5
MJE270/MJE271
3.0
30
70
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE271G | 功能描述:两极晶体管 - BJT 2A 100V Bipolar Power PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE2801 | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,60V,75W) |
| MJE2801T | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,60V,75W) |
| MJE2901 | 制造商:Motorola Inc 功能描述: |
| MJE2901T | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,60V,75W) |
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