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参数资料
| 型号： | MJE3439 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS |
| 中文描述： | 0.3 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 文件页数： | 2/4页 |
| 文件大小： | 100K |
| 代理商： | MJE3439 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(VCE = 300 Vdc, IB = 0)
Collector Cutoff Current
ICEX
—
500
μ
Adc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
hFE
—
Base–Emitter Saturation Voltage
—
1.3
Vdc
Base–Emitter On Voltage
VBE(on)
—
0.8
Vdc
Output Capacitance
—
10
pF
Small–Signal Current Gain
hfe
25
—
—
1.0
0.7
1.0
Figure 2. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
0.3
0.2
0.05
0.03
0.001
5.0
10
I
0.02
2.0
20
50
1000
00.1
100
200
500
MJE3439
0.01
0.007
0.002
0.003
0.005
3.0
7.0
30
70
300
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
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| MJE3439G | 功能描述:两极晶体管 - BJT 0.3A 350V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE344 | 功能描述:两极晶体管 - BJT 0.5A 200V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE344_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic NPN Silicon Medium?Power Transistor |
| MJE3440 | 功能描述:两极晶体管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE344G | 功能描述:两极晶体管 - BJT 0.5A 200V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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