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参数资料
| 型号： | MJE5742AK |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 12/61页 |
| 文件大小： | 397K |
| 代理商： | MJE5742AK |
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MJE5740 MJE5741 MJE5742
3–641
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
—
—
Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
—
—
2
3
2.2
Vdc
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
—
—
2.5
3.5
2.4
Vdc
Diode Forward Voltage (2) (IF = 5 Adc)
Vf
—
—
2.5
Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
td
—
0.04
—
s
Rise Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 =IB2 = 0 25 A t = 25 s
tr
—
0.5
—
s
Storage Time
IB1 = IB2 = 0.25 A, tp = 25 s,
Duty Cycle
v 1%)
ts
—
8
—
s
Fall Time
Duty Cycle
v 1%)
tf
—
2
—
s
Inductive Load, Clamped (Table 1)
Voltage Storage Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
tsv
—
4
—
s
Crossover Time
( C( k)
,
CE( k)
IB1 = 0.06 A, VBE(off) = 5 Vdc)
tc
—
2
—
s
(1) Pulse Test: Pulse Width 300
s, Duty Cycle = 2%.
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
(2) Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
V
BE
,BASE–EMITTER
VOL
TAGE
(VOL
TS)
trv
IC
VCE
90% IB1
tsv
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC
10% VCE(pk)
10%
IC(pk) 2% IC
IB
tfi
tti
tc
0.1
IC, COLLECTOR CURRENT (AMPS)
5
2000
h
FE
,DC
CURRENT
GAIN
VCE = 5 V
1
+25
°C
210
1000
100
10
0
TC, CASE TEMPERATURE (°C)
0
40
120
160
60
POWER
DERA
TING
FACT
OR
(%)
SECOND BREAKDOWN DERATING
100
80
40
20
60
100
140
80
THERMAL DERATING
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
2.4
1.6
0.4
Figure 3. DC Current Gain
Figure 4. Base–Emitter Voltage
2
1.2
0.8
hFE = 20
0.2
10
2
0.5
1
5
TIME
150
°C
–55
°C
20
2.2
1.4
1.8
1
0.6
+150
°C
+25
°C
–55
°C
TYPICAL CHARACTERISTICS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5742G | 功能描述:达林顿晶体管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5850 | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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