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参数资料
| 型号： | MJW3281A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD |
| 封装： | CASE 340L-02, TO-247, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 91K |
| 代理商： | MJW3281A |
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 1
1
Publication Order Number:
MJW3281A/D
MJW3281A (NPN)
MJW1302A (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJW3281A and MJW1302A are PowerBase
transistors for high power audio, disk head positioners and other linear
applications.
Designed for 100 W Audio Frequency
Gain Complementary:
Gain Linearity from 100 mA to 7 A
hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area – 1 A/100 V @ 1 Second
High fT – 30 MHz Typical
power
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
VCEX
IC
230
Vdc
Collector–Base Voltage
230
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector–Emitter Voltage – 1.5 V
230
Vdc
Collector Current – Continuous
Collector Current
–
Peak (Note 1)
15
25
Adc
Base Current – Continuous
IB
PD
1.5
Adc
Total Power Dissipation @ TC = 25
°
C
Derate Above 25
°
C
200
1.43
Watts
W/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
R
θ
JC
0.7
°
C/W
Thermal Resistance,
Junction to Ambient
R
θ
JA
40
°
C/W
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Device
Package
Shipping
ORDERING INFORMATION
MJW3281A
TO–247
http://onsemi.com
TO–247
CASE 340K
STYLE 3
30 Units/Rail
2
1
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
230 VOLTS
200 WATTS
3
MARKING DIAGRAM
MJW
xxxxA
LLYWW
MJWxxxxA= Device Code
xxxx
= 3281 OR 1302
LL
= Location Code
Y
= Year
WW
= Work Week
Preferred
devices are recommended choices for future use
and best overall value.
MJW1302A
TO–247
30 Units/Rail
1 BASE
2 COLLECTOR
3 EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJW3281A_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS |
| MJW3281A_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJW3281AG | 功能描述:两极晶体管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJWI10 | 制造商:MINMAX 制造商全称:Minmax Technology Co., Ltd. 功能描述:DC/DC CONVERTER 10W, High Power Density |
| MJWI20-24S24 | 制造商:MINMAX 制造商全称:Minmax Technology Co., Ltd. 功能描述:DC/DC CONVERTER 20W, Highest Power Density |
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