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| 型号： | MJW18020 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN Silicon Power Transistors High Voltage Planar |
| 中文描述： | 30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AD |
| 封装： | CASE 340L-02, TO-247, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 55K |
| 代理商： | MJW18020 |
Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 0
1
Publication Order Number:
MJW180203/D
MJW18020
Preferred Devices
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
Mains features include:
High and Excellent Gain Linearity
Fast and Very Tight Switching Times Parameters t
si
and t
fi
Very Stable Leakage Current due to the Planar Structure
High Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
450
Vdc
Collector–Base Breakdown Voltage
V
CES
1000
Vdc
Collector–Base Voltage
V
CBO
1000
Vdc
Emitter–Base Voltage
V
EBO
9.0
Vdc
Collector Current – Continuous
–
Peak (Note 1.)
I
C
30
45
Adc
Base Current – Continuous
–
Peak (Note 1.)
I
B
6.0
10
Adc
Total Power Dissipation @ T
C
= 25 C
Derate Above 25 C
P
D
250
2.0
Watts
W/ C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction–to–Case
R
θ
JC
0.5
C/W
Thermal Resistance,
Junction–to–Ambient
R
θ
JA
50
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
T
L
275
C
1. Pulse Test: Pulse Width = 5 s, Duty Cycle
≤
10%.
Device
Package
Shipping
ORDERING INFORMATION
MJW18020
TO–247
http://onsemi.com
TO–247
CASE 340K
STYLE 3
30 Units/Rail
2
1
30 AMPERES
1000 VOLTS BV
CES
450 VOLTS BV
CEO
250 WATTS
3
MARKING DIAGRAM
MJW
18020
LLYWW
MJW18020= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
Preferred
devices are recommended choices for future use
and best overall value.
1 BASE
2 COLLECTOR
3 EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJW18020_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar |
| MJW18020G | 功能描述:两极晶体管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJW21191 | 功能描述:两极晶体管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJW21191G | 功能描述:两极晶体管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJW21192 | 功能描述:两极晶体管 - BJT 8A 150V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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