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| 型号： | MK30N512VML100 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | RISC MICROCONTROLLER, PBGA104 |
| 封装： | 8 X 8 MM, MAPBGA-104 |
| 文件页数： | 9/60页 |
| 文件大小： | 877K |
| 代理商： | MK30N512VML100 |
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Figure 2. Run mode supply current vs. core frequency — all peripheral clocks enabled
5.1.6 EMC radiated emissions operating behaviors
Table 6. EMC radiated emissions operating behaviors
Symbol
Description
Frequency
band (MHz)
Typ.
Unit
Notes
VRE1
Radiated emissions voltage, band 1
0.15–50
TBD
dBμV
VRE2
Radiated emissions voltage, band 2
50–150
TBD
VRE3
Radiated emissions voltage, band 3
150–500
TBD
VRE4
Radiated emissions voltage, band 4
500–1000
TBD
VRE_IEC_SAE IEC and SAE level
0.15–1000
TBD
—
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions, IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/
Wideband TEM (GTEM) Cell Method.
2. VDD = 3 V, TA = 25 °C, fOSC = 16 MHz (crystal), fBUS = 20 MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated
Circuits—TEM/Wideband TEM (GTEM) Cell Method.
General
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
17
Preliminary
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