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参数资料
| 型号： | MM54C89J |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | DRAM |
| 英文描述： | 64-Bit TRI-STATE Random Access Read/Write Memory |
| 中文描述： | 16 X 4 STANDARD SRAM, 910 ns, CDIP16 |
| 封装： | CERAMIC, DIP-16 |
| 文件页数： | 1/6页 |
| 文件大小： | 130K |
| 代理商： | MM54C89J |
TL/F/5888
M
March 1988
MM54C89/MM74C89 64-Bit TRI-STATE
é
Random Access Read/Write Memory
General Description
The MM54C89/MM74C89 is a 16-word by 4-bit random ac-
cess read/write memory. Inputs to the memory consist of
four address lines, four data input lines, a write enable line
and a memory enable line. The four binary address inputs
are decoded internally to select each of the 16 possible
word locations. An internal address register latches the ad-
dress information on the positive to negative transition of
the memory enable input. The four TRI-STATE data output
lines working in conjunction with the memory enable input
provide for easy memory expansion.
Address Operation:
Address inputs must be stable t
SA
pri-
or to the positive to negative transition of memory enable. It
is thus not necessary to hold address information stable for
more than t
HA
after the memory is enabled (positive to neg-
ative transition of memory enable).
Note:
The timing is different than the DM7489 in that a positive to negative
transition of the memory enable must occur for the memory to be
selected.
Write Operation:
Information present at the data inputs is
written into the memory at the selected address by bringing
write enable and memory enable low.
Read Operation:
The complement of the information which
was written into the memory is non-destructively read out at
the four outputs. This is accomplished by selecting the de-
sired address and bringing memory enable low and write
enable high.
When the device is writing or disabled the output assumes a
TRI-STATE (Hi-z) condition.
Features
Y
Wide supply voltage range
3.0V to 15V
Y
Guaranteed noise margin
1.0V
Y
High noise immunity
0.45 V
CC
(typ.)
fan out of 2
driving 74L
Y
Low power
TTL compatibility
Y
Low power consumption
100 nW/package (typ.)
130 ns (typ.) at V
CC
e
10V
Y
Fast access time
Y
TRI-STATE output
Logic and Connection Diagrams
TL/F/5888–1
Dual-In-Line Package
TL/F/5888–2
Top View
Order Number MM54C89
or MM74C89
TRI-STATE
é
is a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation
RRD-B30M105/Printed in U. S. A.
相关PDF资料 |
PDF描述 |
|---|---|
| MM54C89N | 64-Bit TRI-STATE Random Access Read/Write Memory |
| MM54C901 | Hex Inverting TTL, Non-Inverting TTL, Inverting CMOS, Non-Inverting CMOS Buffer |
| MM54C902 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:+/-20%; Power Rating:0.4W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:+/-400ppm/ C; Adjustment Type:Knob; Linearity %:1% RoHS Compliant: Yes |
| MM74C902 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:+/-20%; Power Rating:0.7W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:+/-400ppm/ C; Adjustment Type:Knob RoHS Compliant: Yes |
| MM54C903 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:20%; Power Rating:1.2W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:400ppm/ C; Adjustment Type:Knob RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MM54C89J/883 | 制造商:Texas Instruments 功能描述:Logic Misc |
| MM54C89JB | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
| MM54C89N | 制造商:NSC 制造商全称:National Semiconductor 功能描述:64-Bit TRI-STATE Random Access Read/Write Memory |
| MM54C89W | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
| MM54C89WB | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
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