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参数资料
| 型号： | MM54C89J |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | DRAM |
| 英文描述： | 64-Bit TRI-STATE Random Access Read/Write Memory |
| 中文描述： | 16 X 4 STANDARD SRAM, 910 ns, CDIP16 |
| 封装： | CERAMIC, DIP-16 |
| 文件页数： | 3/6页 |
| 文件大小： | 130K |
| 代理商： | MM54C89J |
AC Electrical Characteristics
*
T
A
e
25
§
C, C
L
e
50 pF, unless otherwise noted (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
SR
Write Enable Setup
Time for a Read
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V, t
WS
e
0
V
CC
e
10V, t
WS
e
0
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V, C
L
e
5 pF, R
L
e
10k
V
CC
e
10V, C
L
e
5 pF, R
L
e
10k
0
0
ns
ns
t
WS
Write Enable Setup
Time for a Write
t
ME
t
ME
ns
ns
t
WE
Write Enable Pulse Width
300
100
160
60
ns
ns
t
HD
Data Input Hold Time
50
25
ns
ns
t
SD
Data Input Setup
50
25
ns
ns
t
1H
, t
0H
Propagation Delay from a Logical
‘‘1’’ or Logical ‘‘0’’ to the High
Impedance State from
Memory Enable
180
b
85
300
120
ns
ns
t
1H
, t
0H
Propagation Delay from a Logical
‘‘1’’ or Logical ‘‘0’’ to the High
Impedance State from
Write Enable
V
CC
e
50V, C
L
e
5 pF, R
L
e
10k
V
CC
e
10V, C
L
e
5 pF, R
L
e
10k
180
85
300
120
ns
ns
C
IN
C
OUT
C
PD
*
AC Parameters are guaranteed by DC correlated testing.
Input Capacity
Any Input (Note 2)
5
pF
Output Capacity
Any Output (Note 2)
6.5
pF
Power Dissipation Capacity
(Note 3)
230
pF
Note 2:
Capacitance is guaranteed by periodic testing.
Note 3:
C
PD
determines the no load AC power consumption of any CMOS device. For complete explanation see 54C/74C Family Characteristics application note,
AN-90.
AC Electrical Characteristics
*
Guaranteed across the specified temperature range, C
L
e
50 pF
MM54C89
MM74C89
Parameter
Conditions
T
A
e b
55
§
C to
a
125
§
C
Min
T
A
e b
40
§
C to
a
85
§
C
Min
Units
Max
Max
t
PD
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
700
310
250
600
265
210
ns
ns
ns
t
ACC
910
400
320
780
345
270
ns
ns
ns
t
SA
210
90
70
180
80
60
ns
ns
ns
t
HA
80
55
45
70
50
40
ns
ns
ns
t
ME
560
210
170
480
180
150
ns
ns
ns
t
WE
420
140
110
360
120
100
ns
ns
ns
t
HD
70
35
30
60
30
25
ns
ns
ns
*
AC Parameters are guaranteed by DC correlated testing.
3
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PDF描述 |
|---|---|
| MM54C89N | 64-Bit TRI-STATE Random Access Read/Write Memory |
| MM54C901 | Hex Inverting TTL, Non-Inverting TTL, Inverting CMOS, Non-Inverting CMOS Buffer |
| MM54C902 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:+/-20%; Power Rating:0.4W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:+/-400ppm/ C; Adjustment Type:Knob; Linearity %:1% RoHS Compliant: Yes |
| MM74C902 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:+/-20%; Power Rating:0.7W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:+/-400ppm/ C; Adjustment Type:Knob RoHS Compliant: Yes |
| MM54C903 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:20%; Power Rating:1.2W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:400ppm/ C; Adjustment Type:Knob RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MM54C89J/883 | 制造商:Texas Instruments 功能描述:Logic Misc |
| MM54C89JB | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
| MM54C89N | 制造商:NSC 制造商全称:National Semiconductor 功能描述:64-Bit TRI-STATE Random Access Read/Write Memory |
| MM54C89W | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
| MM54C89WB | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
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