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参数资料
| 型号： | MM54C89J |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | DRAM |
| 英文描述： | 64-Bit TRI-STATE Random Access Read/Write Memory |
| 中文描述： | 16 X 4 STANDARD SRAM, 910 ns, CDIP16 |
| 封装： | CERAMIC, DIP-16 |
| 文件页数： | 5/6页 |
| 文件大小： | 130K |
| 代理商： | MM54C89J |
Switching Time Waveforms
(Continued)
Read Modify Write Cycle
TL/F/5888–9
Note:
t
r
e
60 ns
t
f
e
10 ns
5
相关PDF资料 |
PDF描述 |
|---|---|
| MM54C89N | 64-Bit TRI-STATE Random Access Read/Write Memory |
| MM54C901 | Hex Inverting TTL, Non-Inverting TTL, Inverting CMOS, Non-Inverting CMOS Buffer |
| MM54C902 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:+/-20%; Power Rating:0.4W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:+/-400ppm/ C; Adjustment Type:Knob; Linearity %:1% RoHS Compliant: Yes |
| MM74C902 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:+/-20%; Power Rating:0.7W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:+/-400ppm/ C; Adjustment Type:Knob RoHS Compliant: Yes |
| MM54C903 | Linear Motion Control; Series:LCP12; Track Resistance:10kohm; Resistance Tolerance:20%; Power Rating:1.2W; Resistor Element Material:Conductive Plastic; Temperature Coefficient:400ppm/ C; Adjustment Type:Knob RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MM54C89J/883 | 制造商:Texas Instruments 功能描述:Logic Misc |
| MM54C89JB | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
| MM54C89N | 制造商:NSC 制造商全称:National Semiconductor 功能描述:64-Bit TRI-STATE Random Access Read/Write Memory |
| MM54C89W | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
| MM54C89WB | 制造商:ROCHESTER 制造商全称:ROCHESTER 功能描述:Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V |
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