参数资料
型号: MMBD4148,215
厂商: NXP Semiconductors
文件页数: 3/10页
文件大小: 66K
描述: DIODE HIGH SPEED SWITCHING SOT23
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 75V
电流 - 平均整流 (Io): 215mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 150mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 4ns
电流 - 在 Vr 时反向漏电: 500nA @ 75V
电容@ Vr, F: 1.5pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: 带卷 (TR)
MMBD4148_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 4 June 2009 2 of 10
NXP Semiconductors
MMBD4148
High-speed switching diode
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Tj
=25°C prior to surge.
Table 3. Ordering information
Type number
Package
Name
Description
Version
MMBD4148 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number
Marking code[1]
MMBD4148 A6*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-75V
VR
reverse voltage - 75 V
IF
forward current
[1]
- 215 mA
IFRM
repetitive peak forward
current
tp
0.5
μs;
δ≤0.25
- 500 mA
IFSM
non-repetitive peak forward
current
square wave
[2]
tp
=1μs-4A
tp
=1ms - 1 A
tp
= 1 s - 0.5 A
Ptot
total power dissipation Tamb
25
°C
[1]
- 250 mW
Tj
junction temperature - 150
°C
Tamb
ambient temperature
?65 +150
°C
Tstg
storage temperature
?65 +150
°C
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