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| 型号： | MMBD452LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 119K |
| 描述： | DIODE SCHOTTKY DUAL 30V SOT-23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 - 1 对串联 |
| 电压 - 峰值反向(最大)： | 30V |
| 电容@ Vr, F： | 1.5pF @ 15V，1MHz |
| 功率耗散（最大）： | 225mW |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | MMBD452LT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2009
August, 2009 ?
Rev. 4
1
Publication Order Number:
MMBD452LT1/D
MMBD452LT1G
Dual Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high?efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low?cost, high?volume consumer
and industrial/commercial requirements.
Features
?
Extremely Low Minority Carrier Lifetime
?
Very Low Capacitance
?
Low Reverse Leakage
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TJ
= 125
°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA
= 25
°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
Operating Junction Temperature Range
TJ
?55 to +125
°C
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR
= 10
A)
V(BR)R
30
?
?
V
Total Capacitance
(VR
= 15 V, f = 1.0 MHz) Figure 1
CT
?
0.9
1.5
pF
Reverse Leakage
(VR
= 25 V) Figure 3
IR
?
13
200
nAdc
Forward Voltage
(IF
= 1.0 mAdc) Figure 4
VF
?
0.38
0.45
Vdc
Forward Voltage
(IF
= 10 mAdc) Figure 4
VF
?
0.52
0.6
Vdc
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 11
1
2
3
Device Package Shipping?
ORDERING INFORMATION
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD452LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5N M
5N = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
3
CATHODE/ANODE
1
ANODE
2
CATHODE
30 VOLTS
DUAL HOT?CARRIER
DETECTOR AND SWITCHING
DIODES
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| MMBD5004A-7 | 功能描述:MOSFET HiVolt Switching Dio 100V SOT23 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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