参数资料
型号: MMBD701LT3G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 132K
描述: DIODE SCHOTTKY 70V SOT-23
产品变化通告: Product Discontinuation 02/Jan/2007
标准包装: 10,000
二极管类型: 肖特基 - 单
电压 - 峰值反向(最大): 70V
电容@ Vr, F: 1pF @ 20V,1MHz
功率耗散(最大): 200mW
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
MBD701, MMBD701L, SMMBD701L
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
IF, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)
I
F
, REVERSE LEAKAGE ( A)
I
R
0.2 0.4 0.8 1.2 1.6 2.0
100
10
0.00101020304050
10
1.0
0.1
0.01
0
0102030 40 50 60 70 80 10090
500
0
0 5.0 10 15 20 25 3530
1.6
50
40 45
1.2
0.8
0.4
f = 1.0 MHz
TA
= -
?C
TA
= 85
?C
TA
= 25
?C
1.0
0.1
0
KRAKAUER METHOD
2.0
TA
= 100
?C
, TOTAL CAPACITANCE (pF)
C
T
, MINORITY CARRIER LIFETIME (ps)
400
300
200
100
TA
= 25
?C
TA
= 75
?C
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50
INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
IF(PEAK)
IR(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
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