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| 型号： | MMBD770T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 127K |
| 描述： | DIODE SCHOTTKY 1A 70V SOT-323 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 - 单 |
| 电压 - 峰值反向(最大)： | 70V |
| 电流 - 最大： | 200mA |
| 电容@ Vr, F： | 1pF @ 20V，1MHz |
| 功率耗散（最大）： | 120mW |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MMBD330T1/D
MMBD330T1G,
SMMBD330T1G,
MMBD770T1G,
SMMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high?efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT?323/SC?70 package which is designed for low?power surface
mount applications.
Features
?
Extremely Low Minority Carrier Lifetime
?
Very Low Capacitance
?
Low Reverse Leakage
?
Available in 8 mm Tape and Reel
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
VR
30
70
Vdc
Forward Continuous Current (DC)
IF
200
mA
Nonrepetitive Peak Forward Current
(Note 1)
IFSM
1.0
A
Forward Power Dissipation
TA
= 25
?C
PF
120
mW
Junction Temperature
TJ
?55 to +125
?C
Storage Temperature Range
Tstg
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
*Date Code orientation may vary depending
upon the manufacturing location.
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
MARKING DIAGRAMS
SC?70/SOT?323
CASE 419
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD770T1G SC?70
(Pb?Free)
3,000/Tape & Reel
13
MMBD330T1G SC?70
(Pb?Free)
3,000/Tape & Reel
XX M
1
XX = Specific Device Code
4T = MMBD330T1
5H = MMBD770T1
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
SMMBD330T1G SC?70
(Pb?Free)
3,000/Tape & Reel
SMMBD770T1G SC?70
(Pb?Free)
3,000/Tape & Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD770T1G | 功能描述:肖特基二极管与整流器 70V 120mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD770W | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD770W_09 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD770WS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD914 | 功能描述:整流器 High Cond Ult Fst Di RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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