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参数资料
| 型号： | MMBFJ309LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 108K |
| 描述： | JFET SS N-CHAN 25V SOT23 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 3,000 |
| 晶体管类型： | N 通道 JFET |
| 额定电流： | 30mA |
| 电压 - 额定： | 25V |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MMBFJ309LT1GOS MMBFJ309LT1GOS-ND MMBFJ309LT1GOSTR |
?
Semiconductor Components Industries, LLC, 2013
October, 2013 ?
Rev. 7
1
Publication Order Number:
MMBFJ309LT1/D
MMBFJ309L, MMBFJ310L,
SMMBFJ309L, SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N?Channel
Features
?
Drain and Source are Interchangeable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain?Source Voltage
VDS
25
Vdc
Gate?Source Voltage
VGS
25
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 10
Device Package Shipping?
ORDERING INFORMATION
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBFJ309LT1G,
SMMBFJ309LT1G
SOT?23
(Pb?Free)
3,000 / Tape &
Reel
1
2
3
MMBFJ310LT1G,
SMMBFJ310LT1G
SOT?23
(Pb?Free)
3,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
6x M
6x = Device Code
x = U for MMBFJ309L, SMMBFJ309L
x = T for MMBFJ310L, SMMBFJ310L
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
SMMBFJ310LT3G SOT?23
(Pb?Free)
10,000 / Tape &
Reel
相关PDF资料 |
PDF描述 |
|---|---|
| MMBFJ310 | IC SWITCH RF N-CH 25V 10MA SOT23 |
| MMBV3401LT1 | DIODE TUNING SS 35V SOT23 |
| MMBV3700LT1G | DIODE TUNING SS 200V SOT23 |
| MMDL101T1 | DIODE SCHOTTKY 7V 200MW SOD-323 |
| MMDL301T1 | DIODE SCHOTTKY 200MW 30V SOD-323 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBFJ309LT1G | 制造商:ON Semiconductor 功能描述:RF JFET |
| MMBFJ309LT1G_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET - VHF/UHF Amplifier Transistor |
| MMBFJ310 | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| MMBFJ310_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier |
| MMBFJ310_Q | 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
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