参数资料
型号: MMBFJ309LT1G
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 108K
描述: JFET SS N-CHAN 25V SOT23
产品目录绘图: MOSFET SOT-23-3 Pkg
标准包装: 3,000
晶体管类型: N 通道 JFET
额定电流: 30mA
电压 - 额定: 25V
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: MMBFJ309LT1GOS
MMBFJ309LT1GOS-ND
MMBFJ309LT1GOSTR
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate?Source Breakdown Voltage
(IG
=
?1.0 Adc, VDS
= 0)
V(BR)GSS
?25
?
?
Vdc
Gate Reverse Current (VGS
=
?15 Vdc)
Gate Reverse Current (VGS
=
?15 Vdc, TA
= 125
°C)
IGSS
?
?
?
?
?1.0
?1.0
nAdc
Adc
Gate Source Cutoff Voltage MMBFJ309
(VDS
= 10 Vdc, I
D
= 1.0 nAdc) MMBFJ310, SMMBFJ310
VGS(off)
?1.0
?2.0
?
?
?4.0
?6.5
Vdc
ON CHARACTERISTICS
Zero?Gate?Voltage Drain Current MMBFJ309
(VDS
= 10 Vdc, V
GS
= 0) MMBFJ310, SMMBFJ310
IDSS
12
24
?
?
30
60
mAdc
Gate?Source Forward Voltage
(IG
= 1.0 mAdc, V
DS
= 0)
VGS(f)
?
?
1.0
Vdc
SMALL?SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
?
18
mmhos
Output Admittance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|yos|
?
?
250
mhos
Input Capacitance
(VGS
=
?10 Vdc, VDS
= 0 Vdc, f = 1.0 MHz)
Ciss
?
?
5.0
pF
Reverse Transfer Capacitance
(VGS
=
?10 Vdc, VDS
= 0 Vdc, f = 1.0 MHz)
Crss
?
?
2.5
pF
Equivalent Short?Circuit Input Noise Voltage
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
en
?
10
?
nVHz
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