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参数资料
| 型号： | MMBF170-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 500MA SOT23-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 200mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 40pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMBF170DICT |
MMBF170
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ? 1.0M ?
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage
Drain Current (Note 5)
Continuous
Pulsed
Continuous
Pulsed
V GSS
I D
? 20
? 40
500
800
V
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
300
1.80
417
-55 to +150
Units
mW
mW/°C
K/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
60
?
?
70
?
?
?
1.0
? 10
V
μA
nA
V GS = 0V, I D = 100μA
V DS = 60V, V GS = 0V
V GS = ? 15V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS(ON)
g FS
0.8
??
?
80
2.1
??
?
?
3.0
5.0
5.3
?
V
?
mS
V DS = V GS , I D = 250μA
V GS = 10V, I D = 200mA
V GS = 4.5V, I D = 50mA
V DS =10V, I D = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
22
40
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
11
2.0
30
5.0
pF
pF
V DS = 10V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
t on
t off
?
?
?
?
10
10
ns
ns
V DD = 25V, I D = 0.5A,
V GS = 10V, R GEN = 50 ?
Notes:
5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
MMBF170
Document number: DS30104 Rev. 13 - 2
2 of 5
www.diodes.com
August 2013
? Diodes Incorporated
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