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| 型号： | MMBF170 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 500MA SOT-23 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 200mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 40pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
March 2010
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
■
■
■
■
High density cell design for low R DS(ON) .
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
BS170
MMBF170
D
S
D
G
S
TO-92
G
SOT-23
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V DGR
V GSS
I D
T J , T STG
T L
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R GS ≤ 1M Ω )
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
BS170
500
1200
MMBF170
60
60
± 20
500
800
- 55 to 150
300
Units
V
V
V
mA
° C
° C
Purposes, 1/16" from Case for 10 Seconds
Thermal Characteristics
T A = 25°C unless otherwise noted
Symbol
P D
R θ JA
Parameter
Maximum Power Dissipation
Derate above 25 ° C
Thermal Resistance, Junction to Ambient
BS170
830
6.6
150
MMBF170
300
2.4
417
Units
mW
mW/ ° C
° C/W
? 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF170 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| MMBF170_08 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| MMBF170_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
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