- 您现在的位置：买卖IC网 > Datasheet目录478 > MMDF2N02ER2G (ON Semiconductor)MOSFET N-CHAN DUAL 2A 25V 8SOIC Datasheet资料下载
参数资料
| 型号： | MMDF2N02ER2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 2A 25V 8SOIC |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 532pF @ 16V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | MMDF2N02ER2GOS |
MMDF2N02E
Power MOSFET
2 Amps, 25 Volts
N ? Channel SO ? 8, Dual
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain ? to ? source diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc ? dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
http://onsemi.com
2 AMPERES, 25 VOLTS
R DS(on) = 100 m W
N ? Channel
D
Discrete
(Pb ? Free)
G
?
?
?
?
?
?
?
?
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive ? Can Be Driven by Logic ICs
Miniature SO ? 8 Surface Mount Package ? Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
I DSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO ? 8 Package Provided
This is a Pb ? Free Device
8
1
S
SO ? 8
CASE 751
STYLE 11
8
1
MARKING
DIAGRAM
F2N02
AYWW G
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
F2N02 = Device Code
A = Assembly Location
Y = Year
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A = 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
V DSS
V GS
I D
I D
I DM
25
± 20
3.6
2.5
18
Vdc
Vdc
Adc
Apk
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Total Power Dissipation @ T A = 25 ° C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C (V DD = 20 Vdc,
V GS = 10 Vdc, Peak I L = 9.0 Apk,
L = 6.0 mH, R G = 25 W )
P D
T J , T stg
E AS
2.0
? 55 to 150
245
W
° C
mJ
Source ? 1
Gate ? 1
Source ? 2
Gate ? 2
1
2
3
4
8
7
6
5
Drain ? 1
Drain ? 1
Drain ? 2
Drain ? 2
Thermal Resistance, Junction ? to ? Ambient
(Note 1)
R q JA
62.5
° C/W
ORDERING INFORMATION
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 0.0625 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided) with
one die operating, 10 sec. max.
Device Package Shipping ?
MMDF2N02ER2G SO ? 8 2500 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 8
1
Publication Order Number:
MMDFN02E/D
相关PDF资料 |
PDF描述 |
|---|---|
| MMDF2P02ER2G | MOSFET PWR P-CH 25V 2.5A 8-SOIC |
| MMDF2P02HDR2G | MOSFET P-CH DUAL 3.3A 20V 8SOIC |
| MMDF3N02HDR2G | MOSFET PWR P-CH 20V 3.8A 8-SOIC |
| MMDF3N04HDR2G | MOSFET N-CH DUAL 3.4A 40V 8SOIC |
| MMDFS6N303R2 | MOSFET N-CH 30V 6A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2N05ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMDF2N06V | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS |
| MMDF2N06VL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS |
| MMDF2P01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2P01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。