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参数资料
| 型号： | MMDF2N02ER2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 2A 25V 8SOIC |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 532pF @ 16V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | MMDF2N02ER2GOS |
MMDF2N02E
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals ( D t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain ? gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I G(AV) ) can be made from a
rudimentary analysis of the drive circuit so that:
t = Q/I G(AV)
During the rise and fall time interval when switching a
resistive load, V GS remains virtually constant at a level
known as the plateau voltage, V SGP . Therefore, rise and fall
times may be approximated by the following:
t r = Q 2 x R G /(V GG ? V GSP )
t f = Q 2 x R G /V GSP
where
V GG = the gate drive voltage, which varies from zero to V GG
R G = the gate drive resistance and Q 2 and V GSP are read
from the gate charge curve.
During the turn ? on and turn ? off delay times, gate current
is not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t d(on) = R G C iss In [V GG /(V GG ? V GSP )]
t d(off) = R G C iss In (V GG /V GSP )
The capacitance (C iss ) is read from the capacitance curve
at a voltage corresponding to the off ? state condition when
calculating t d(on) and is read at a voltage corresponding to the
on ? state when calculating t d(off) .
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
1200
V DS = 0 V
V GS = 0 V
T J = 25 ° C
12
16
1000
C iss
9
V DS
QT
V GS
12
800
600
400
200
C rss
C iss
C oss
C rss
6
3
Q1
Q3
Q2
I D = 2.3 A
T J = 25 ° C
8
4
0
10
5
0
5
10
15
20
25
0
0
2
4
6
8
10
0
12
V GS
V DS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage versus Total Charge
http://onsemi.com
4
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