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| 型号： | MMDFS6N303R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6A 8-SOIC |
| 产品变化通告： | Product Obsolescence 30/Dec/2003 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 24V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | MMDFS6N303R2OS |
MMDFS6N303
Power MOSFET
6 Amps, 30 Volts
N ? Channel SO ? 8, FETKY t
The FETKY product family incorporates low R DS(on) , true logic
level MOSFETs packaged with industry leading, low forward drop,
low leakage Schottky Barrier rectifiers to offer high efficiency
components in a space saving configuration. Independent pinouts for
MOSFET and Schottky die allow the flexibility to use a single
component for switching and rectification functions in a wide variety
of applications such as Buck Converter, Buck ? Boost, Synchronous
Rectification, Low Voltage Motor Control, and Load Management in
Battery Packs, Chargers, Cell Phones and other Portable Products.
Features
? Power MOSFET with Low V F
? Lower Component Placement and Inventory Costs along with
Board Space Savings
http://onsemi.com
6 AMPERES
30 VOLTS
R DS(on) = 35 m W
V F = 0.42 Volts
N ? Channel
D
?
?
?
?
?
Logic Level Gate Drive — Can be Driven by Logic ICs
Mounting Information for SO ? 8 Package Provided
Applications Information Provided
R2 Suffix for Tape and Reel (2500 units/13 ″ reel)
Marking: 6N303
G
S
MARKING
MOSFET MAXIMUM RATINGS
(T J = 25 ° C unless otherwise noted) (Note 1)
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Symbol
V DSS
V DGR
Value
30
30
Unit
Vdc
Vdc
8
1
SO ? 8
CASE 751
STYLE 18
DIAGRAM
8
6N303
ALYW
1
Gate ? to ? Source Voltage — Continuous
Drain Current (Note 2)
? Continuous @ T A = 25 ° C
? Single Pulse (tp v 10 m s)
Total Power Dissipation @ T A = 25 ° C
(Note 2)
V GS
I D
I DM
P D
" 20
6.0
30
2.0
Vdc
Adc
Apk
Watts
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN ASSIGNMENT
Single Pulse Drain ? to ? Source Avalanche
Energy — Startin T J = 25 ° C
V DD = 30 Vdc, V GS = 5.0 Vdc, V DS = 20
Vdc, I L = 9.0 Apk, L = 10 mH, R G = 25 W
E AS
325
mJ
Anode
Anode
Source
1
2
3
8
7
6
Cathode
Cathode
Drain
1. Pulse Test: Pulse Width ≤ 250 m s, Duty Cycle ≤ 2.0%.
2. Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided),
10 sec. max.
Gate
4 5
Top View
Drain
ORDERING INFORMATION
Device
MMDFS6N303R2
Package
SO ? 8
Shipping ?
2500/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 3
1
Publication Order Number:
MMDFS6N303/D
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