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| 型号： | MMFT960T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 300MA SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Discontinuation 27/Jun/2007 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.7 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 3.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 65pF @ 25V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 其它名称： | MMFT960T1OSDKR |
MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N?Channel SOT?223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc?dc converters,
solenoid and relay drivers. The device is housed in the SOT?223
package which is designed for medium power surface mount
applications.
Features
http://onsemi.com
300 mA, 60 VOLTS
R DS(on) = 1.7 W
N?Channel
?
?
?
?
Silicon Gate for Fast Switching Speeds
Low Drive Requirement
The SOT?223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering
G
D
Eliminating the Possibility of Damage to the Die
?
Pb?Free Package is Available
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol Value
Drain?to?Source Voltage V DS 60
Unit
V
1
2
4
TO?261AA
CASE 318E
STYLE 3
Gate?to?Source Voltage ? Non?Repetitive
Drain Current
Total Power Dissipation @ T A = 25 ° C
(Note 1)
Derate above 25 ° C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction?to?Ambient
V GS
I D
P D
T J , T stg
R q JA
± 30
300
0.8
6.4
?65 to 150
156
V
mAdc
W
mW/ ° C
° C
° C/W
3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
AYW
FT960 G
G
Maximum Temperature for Soldering
Purposes
T L
260
° C
1
Gate
2
Drain
3
Source
Time in Solder Bath 10 S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR?4 glass epoxy printed circuit board using minimum
A = Assembly Location
Y = Year
W = Work Week
G = Pb?Free Package
FT960 = Device Code
(Note: Microdot may be in either location)
recommended footprint.
ORDERING INFORMATION
Device
MMFT960T1
MMFT960T1G
Package
SOT?223
SOT?223
Shipping ?
1000 Tape & Reel
1000 Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 5
1
Publication Order Number:
MMFT960T1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT960T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 |
| MMFT960T1G | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMFTN123 | 制造商:Diotec Semiconductor 功能描述: |
| MMFTN138 | 制造商:Diotec 功能描述:Bulk |
| MMFTN170 | 制造商:Diotec Semiconductor 功能描述: |
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