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| 型号： | MMG3006NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/24页 |
| 文件大小： | 0K |
| 描述： | TRANS GPA 33DBM 16-QFN |
| 标准包装： | 1 |
| 频率： | 400MHz ~ 2.4GHz |
| P1dB： | 33dBm（1.99W） |
| 增益： | 17.5dB |
| 噪音数据： | 6.6dB |
| RF 型： | 手机，PCS，PHS，WLL |
| 电源电压： | 5V |
| 电流 - 电源： | 850mA |
| 测试频率： | 900MHz |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | MMG3006NT1DKR |
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3006NT1 is a General Purpose Amplifier that is internally
input prematched and designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 400 to 2400 MHz such as Cellular,
PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF.
Features
? Frequency: 400--2400 MHz
? P1dB: 33 dBm @ 900 MHz
? Small--Signal Gain: 17.5 dB @ 900 MHz
? Third Order Output Intercept Point: 49 dBm @ 900 MHz
? Single 5 Volt Supply
? Internally Input Prematched to 50 Ohms
? RoHS Compliant
? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 13 inch Reel.
Document Number: MMG3006NT1
Rev. 4, 1/2011
MMG3006NT1
400--2400 MHz, 17.5 dB
33 dBm
InGaP HBT
CASE 1898--01
QFN 4x4
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
Symbol
G p
IRL
ORL
900
MHz
17.5
--8
--13
1960
MHz
14
--9
--14
2140
MHz
14
--12
--18
Unit
dB
dB
dB
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature (2)
Symbol
V DC
I DC
P in
T stg
T J
Value
6
1400
28
--65 to +150
150
Unit
V
mA
dBm
° C
° C
(S22)
2. For reliable operation, the junction temperature should not
Power Output @1dB
P1db
33
33
33
dBm
exceed 150 ° C.
Compression
Third Order Output
OIP3
49
49
49
dBm
Intercept Point
1. V DC = 5 Vdc, T A = 25 ° C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 89 ° C, 5 Vdc, 850 mA, no RF applied
Symbol
R θ JC
Value (3)
7.8
Unit
° C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf .
Select Documentation/Application Notes -- AN1955.
? Freescale Semiconductor, Inc., 2008, 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3006NT1
1
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相关代理商/技术参数 |
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|---|---|
| MMG3006NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3006NT1-CUT TAPE | 制造商:Freescale 功能描述:MMG3006 Series 400 - 2400 MHz 5 V Class A Broadband High Linearity Amp - QFN-16 |
| MMG3007NT1 | 功能描述:射频放大器 15DBM 20DBGAIN GPA SOT89 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MMG3007NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor (InGaP HBT) |
| MMG3007NT1_12 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor |
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