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参数资料
| 型号： | MML20211HT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/20页 |
| 文件大小： | 0K |
| 描述： | IC LNA 2GHZ 21P1DB 8DFN |
| 标准包装： | 1,000 |
| 频率： | 1.4GHz ~ 2.8GHz |
| P1dB： | 21.3dBm |
| 增益： | 18.6dB |
| 噪音数据： | 0.65dB |
| RF 型： | * |
| 电源电压： | 5V |
| 电流 - 电源： | 60mA |
| 测试频率： | 2.14GHz |
| 封装/外壳： | 8-VFDFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
Freescale Semiconductor
Technical Data
Enhancement Mode pHEMT
Technology (E--pHEMT)
Low Noise Amplifier
The MML20211H is a single--stage Low Noise Amplifier (LNA) with active bias
and high isolation for use in cellular infrastructure applications. It is designed for
a range of low noise, high linearity applications such as pico cell, femto cell,
tower mounted amplifiers (TMA) and receiver front end circuits. It operates from
a single voltage supply and is suitable for applications with frequencies from
1400 to 2800 MHz such as TD-- SCDMA, W-- CDMA, UMTS, PCS, LTE and
BWA.
Features
? Ultra Low Noise Figure: 0.65 dB @ 2140 MHz
? Frequency: 1400--2800 MHz
? High Reverse Isolation: --35 dB @ 2140 MHz
? P1dB: 21.3 dBm @ 2140 MHz
? Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)
? Third Order Output Intercept Point: 33 dBm @ 2140 MHz
? Active Bias Control (adjustable externally)
? Single 5 Volt Supply
? Supply Current: 60 mA
? 50 Ohm Operation (some external matching required)
? Low Cost DFN Surface Mount Package
? RoHS Compliant
? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
Document Number: MML20211H
Rev. 0, 8/2011
MML20211HT1
1400--2800 MHz, 18.6 dB
21.3 dBm
E--pHEMT
CASE 2132--01
DFN 2x2
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
1400
1800
2140
2700
Rating
Symbol
Value
Unit
Characteristic
Noise Figure (2)
Input Return
Loss (S11)
Symbol
NF
IRL
MHz
0.65
--19.5
MHz
0.65
--16
MHz
0.65
--16.7
MHz
0.85
--17.3
Unit
dB
dB
Supply Voltage
Supply Current
RF Input Power
V DD
I DD
P in
6
200
22
V
mA
dBm
Junction Temperature
T J
150
° C
Output Return
Loss (S22)
Small--Signal
Gain (S21)
Power Output
ORL
G p
P1dB
--24.9
21.3
21.1
--28
19.7
21.1
--26.6
18.6
21.3
--20
18.1
19.6
dB
dB
dBm
Storage Temperature Range T stg --65 to +150 ° C
(3)
3. For reliable operation, the junction temperature should not
exceed 150 ° C.
@ 1dB
Compression
Third Order
IIP3
10.8
12.5
14.4
14.9
dBm
Input Intercept
Point
Third Order
OIP3
32.1
32.2
33
33
dBm
Output
Intercept Point
1. V DD = 5 Vdc, T A = 25 ° C, 50 ohm system, application circuit tuned
for specified frequency.
2. Noise Figure value calculated with connector losses removed.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 87 ° C, 5 Vdc, I DD = 60 mA, no RF applied
Symbol
R θ JC
Value (4)
43.4
Unit
° C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf .
Select Documentation/Application Notes -- AN1955.
? Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MML20211HT1
1
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