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| 型号： | MMSF3P02HDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 5.6A 8-SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 16V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMSF3P02HDR2OSCT |
MMSF3P02HD
Power MOSFET
3 Amps, 20 Volts
P ? Channel SO ? 8
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain ? to ? source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc ? dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
http://onsemi.com
3 AMPERES, 20 VOLTS
R DS(on) = 75 m W
P ? Channel
D
G
Features
? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO ? 8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed, With Soft Recovery
? I DSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Mounting Information for SO ? 8 Package Provided
? This is a Pb ? Free Device
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted) (Note 1)
Rating Symbol Value
Unit
8
1
S
MARKING
DIAGRAM
8
SO ? 8 S3P02
CASE 751 AYWW G
STYLE 13 G
1
S3P02 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage ? Continuous
V DSS
V DGR
V GS
20
20
± 20
Vdc
Vdc
Vdc
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A = 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
I D
I D
I DM
P D
T J , T stg
5.6
3.6
30
2.5
? 55 to 150
Adc
Apk
W
° C
N ? C
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Single Pulse Drain ? to ? Source Avalanche E AS 567 mJ
Energy ? Starting T J = 25 ° C (V DD = 20 Vdc,
V GS = 5.0 Vdc, Peak I L = 9.0 Apk, L = 14
mH, R G = 25 W )
Thermal Resistance, Junction ? to ? Ambient R q JA 50 ° C/
(Note 2) W
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for P ? Channel device omitted for clarity.
2. Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided),
10 sec. max.
ORDERING INFORMATION
Device Package Shipping ?
MMSF3P02HDR2G SO ? 8 2500 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 8
1
Publication Order Number:
MMSF3P02HD/D
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相关代理商/技术参数 |
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| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMSF3P02HDR2SG | 功能描述:MOSFET P-CH 20V 5.6A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMSF3P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS |
| MMSF4205R2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 10A 8-Pin SOIC T/R |
| MMSF4N01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS MOSFET 5.8 AMPERES 20 VOLTS |
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