- 您现在的位置：买卖IC网 > Datasheet目录479 > MMH3111NT1 (Freescale Semiconductor)TRANS GAAS HFET SOT-89 Datasheet资料下载
参数资料
| 型号： | MMH3111NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 0K |
| 描述： | TRANS GAAS HFET SOT-89 |
| 标准包装： | 1 |
| 频率： | 250MHz ~ 4GHz |
| P1dB： | 22.5dBm（177.8mW） |
| 增益： | 12dB |
| 噪音数据： | 3.2dB |
| RF 型： | 手机，PCS，ISM，WLL |
| 电源电压： | 5V |
| 电流 - 电源： | 150mA |
| 测试频率： | 900MHz |
| 封装/外壳： | TO-243AA |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MMH3111NT1DKR |
Freescale Semiconductor
Technical Data
Heterostructure Field Effect
Transistor (GaAs HFET)
Broadband High Linearity Amplifier
The MMH3111NT1 is a General Purpose Amplifier that is internally
input and output prematched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 250 to 4000 MHz such as Cellular,
PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
Features
? Frequency: 250 to 4000 MHz
? P1dB: 22.5 dBm @ 900 MHz
? Small--Signal Gain: 12 dB @ 900 MHz
? Third Order Output Intercept Point: 44 dBm @ 900 MHz
? Single 5 Volt Supply
? Internally Prematched to 50 Ohms
? Internally Biased
? Cost--effective SOT--89 Surface Mount Package
? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
Document Number: MMH3111NT1
Rev. 4, 9/2012
MMH3111NT1
250--4000 MHz, 12 dB
22.5 dBm
GaAs HFET
CASE 2142--01
SOT--89
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Symbol
G p
IRL
900
MHz
12
--14
2140
MHz
11.3
--15
3500
MHz
10
--16
Unit
dB
dB
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Symbol
V DD
I DD
P in
T stg
Value
6
300
20
--65 to +150
Unit
V
mA
dBm
° C
Output Return Loss
ORL
--14
--19
--14
dB
Junction Temperature
(2)
T J
150
° C
(S22)
2. For reliable operation, the junction temperature should not
Power Output @1dB
P1dB
22.5
22
22
dBm
exceed 150 ° C.
Compression
Third Order Output
OIP3
44
44
42
dBm
Intercept Point
1. V DD = 5 Vdc, T A = 25 ° C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95 ° C, 5 Vdc, 150 mA, no RF applied
Symbol
R θ JC
Value (3)
37.5
Unit
° C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf .
Select Documentation/Application Notes -- AN1955.
? Freescale Semiconductor, Inc., 2007--2008, 2010--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
1
相关PDF资料 |
PDF描述 |
|---|---|
| MML20211HT1 | IC LNA 2GHZ 21P1DB 8DFN |
| MMS-1A-V2 0 | SENSOR MICRO MACHINED SMD |
| MMSF3P02HDR2 | MOSFET P-CH 20V 5.6A 8-SOIC |
| MMSF7P03HDR2G | MOSFET P-CH 30V 7A 8-SOIC |
| MODEL 700 | WELDER STRAIN GAGE 115V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMH3111NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterostructure Field Effect Transistor (GaAs HFET) |
| MMH4-1 | 功能描述:汽车连接器 MINI MATE HOUSING RoHS:否 制造商:Amphenol SINE Systems 产品:Contacts 系列:ATP 位置数量: 型式:Female 安装风格: 端接类型: 触点电镀:Nickel |
| MMH41-014 | 制造商:Vishay Intertechnologies 功能描述:MMD1S24-14 T02 |
| MMH41-026 | 制造商:Vishay Dale 功能描述:- Bulk |
| MMH43-0051J1 | 制造商:Vishay Dale 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。