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| 型号： | MMH3111NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 15/16页 |
| 文件大小： | 0K |
| 描述： | TRANS GAAS HFET SOT-89 |
| 标准包装： | 1 |
| 频率： | 250MHz ~ 4GHz |
| P1dB： | 22.5dBm（177.8mW） |
| 增益： | 12dB |
| 噪音数据： | 3.2dB |
| RF 型： | 手机，PCS，ISM，WLL |
| 电源电压： | 5V |
| 电流 - 电源： | 150mA |
| 测试频率： | 900MHz |
| 封装/外壳： | TO-243AA |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MMH3111NT1DKR |
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents and software to aid your design process.
Application Notes
? AN1955: Thermal Measurement Methodology of RF Power Amplifiers
? AN3100: General Purpose Amplifier and MMIC Biasing
Software
? .s2p File
Development Tools
? Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
4
Date
Nov. 2007
Apr. 2008
Apr. 2010
Jan. 2011
Sept. 2012
Description
? Initial Release of Data Sheet
? Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis
?
(ACPR) unit of measure to dBc, p. 5
? Updated Part Numbers in Tables 8, 9, 10, Component Designations and Values, to latest RoHS compliant
part numbers, p. 6, 7, 8
? Changed Maximum Ratings table value for RF input power from 10 to 20 dBm as a result of
improvements made in the measurement method and the capability of the device, p. 1
? Added .s2p File availability to Product Software, p. 15
? Corrected temperature at which ThetaJC is measured from 25 ° C to 95 ° C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
? Removed I DD bias callout from applicable graphs as bias is not a controlled value, p. 4--8
? Removed I DD bias callout from Table 11, Common Source S--Parameters heading as bias is not a
controlled value, p. 9--10
? Added Printed Circuit Boards availability to Development Tools, p. 15
? Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02
(SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an
external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has
slight dimensional differences., p. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer .
? Table 6, ESD Protection Characterization, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 3
? Added Fig. 24, Product Marking, p. 11
? Added AN3100, General Purpose Amplifier and MMIC Biasing to Product Documentation, Application
Notes, p. 15
MMH3111NT1
RF Device Data
Freescale Semiconductor, Inc.
15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMH3111NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Heterostructure Field Effect Transistor (GaAs HFET) |
| MMH4-1 | 功能描述:汽车连接器 MINI MATE HOUSING RoHS:否 制造商:Amphenol SINE Systems 产品:Contacts 系列:ATP 位置数量: 型式:Female 安装风格: 端接类型: 触点电镀:Nickel |
| MMH41-014 | 制造商:Vishay Intertechnologies 功能描述:MMD1S24-14 T02 |
| MMH41-026 | 制造商:Vishay Dale 功能描述:- Bulk |
| MMH43-0051J1 | 制造商:Vishay Dale 功能描述:- Bulk |
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