参数资料
型号: MMDFS6N303R2
厂商: ON Semiconductor
文件页数: 7/11页
文件大小: 0K
描述: MOSFET N-CH 30V 6A 8-SOIC
产品变化通告: Product Obsolescence 30/Dec/2003
标准包装: 2,500
系列: FETKY™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 35 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 31.4nC @ 10V
输入电容 (Ciss) @ Vds: 600pF @ 24V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: MMDFS6N303R2OS
MMDFS6N303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
0.1
0.01
0.001
T J = 125 ° C
85 ° C
0.1
0.01
0.001
T J = 125 ° C
0.0001
0.00001
0.000001
25 ° C
0.0001
0.00001
0.000001
25 ° C
0
5.0
10
15
20
25
30
0
5.0
10
15
20
25
30
1000
V R , REVERSE VOLTAGE (VOLTS)
Figure 17. Typical Reverse Current
5.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 18. Maximum Reverse Current
4.5
4.0
3.5
dc
SQUARE WAVE
FREQ = 20 kHz
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0
I pk /I o = p
I pk /I o = 5.0
I pk /I o = 10
I pk /I o = 20
0
5.0
10
15
20
25
30
0
20
40
60
80
100
120
140
160
V R , REVERSE VOLTAGE (VOLTS)
Figure 19. Typical Capacitance
T A , AMBIENT TEMPERATURE ( ° C)
Figure 20. Current Derating
1.75
dc
1.50
SQUARE
1.25
1.00
I pk /I o = 5.0
I pk /I o = p
WAVE
I pk /I o = 10
0.75
I pk /I o = 20
0.50
0.25
0
0
1.0
2.0
3.0
4.0
5.0
I O , AVERAGE FORWARD CURRENT (AMPS)
Figure 21. Forward Power Dissipation
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