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| 型号： | MMFT5P03HDT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3.7A SOT223 |
| 产品变化通告： | Product Discontinuation 30/Jun/2004 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 5.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | MMFT5P03HDT1OS |
MMFT5P03HD
Preferred Device
Power MOSFET
5 Amps, 30 Volts
P ? Channel SOT ? 223
This miniature surface mount MOSFET features ultra low R DS(on)
and true logic level performance. It is capable of withstanding high
energy in the avalanche and commutation modes and the
drain ? to ? source diode has a very low reverse recovery time.
MMFT5P03HD devices are designed for use in low voltage, high
speed switching applications where power efficiency is important.
Typical applications are dc ? dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery
Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SOT ? 223 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed, With Soft Recovery
? I DSS Specified at Elevated Temperature
http://onsemi.com
5 AMPERES
30 VOLTS
R DS(on) = 100 m Ω
P ? Channel
D
G
S
MARKING
DIAGRAM
? Avalanche Energy Specified
1
2
3
4
TO ? 261AA
CASE 318E
STYLE 3
5P03H
LWW
L
WW
= Location Code
= Work Week
PIN ASSIGNMENT
4 Drain
1
Gate
2
Drain
3
Source
ORDERING INFORMATION
Device
MMFT5P03HDT3
Package
SOT ? 223
Shipping
4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 4
1
Publication Order Number:
MMFT5P03HD/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| MMFT6N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMFT960T1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 |
| MMFT960T1G | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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