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| 型号： | MMDFS6N303R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6A 8-SOIC |
| 产品变化通告： | Product Obsolescence 30/Dec/2003 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 24V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | MMDFS6N303R2OS |
MMDFS6N303
MOSFET ELECTRICAL CHARACTERISTICS ? continued (T C = 25 ° C unless otherwise noted) (Note 7)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 8)
Turn ? On Delay Time
t d(on)
—
8.2
16.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 1.0 Adc,
V GS = 10 Vdc,
R G = 6.0 Ω )
t r
t d(off)
t f
—
—
—
8.5
89.6
61.1
17
179
122
Gate Charge
(V DS = 15 Vdc, I D = 5.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
—
—
—
—
15.7
2.0
4.6
3.9
31.4
—
—
—
nC
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On ? Voltage (Note 7)
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 1.7 Adc,
V GS = 0 Vdc)
(V GS = 0 V, I S = 5.0 A,
dIS/dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
—
—
—
—
—
0.77
54.5
14.8
39.7
0.048
1.2
—
—
—
—
Vdc
ns
m C
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Maximum Instantaneous Forward Voltage (Note 7)
I F = 100 mAdc
I F = 3.0 Adc
I F = 6.0 Adc
Maximum Instantaneous Reverse Current (Note 7)
V R = 30 V
V F
I R
T J = 25 ° C
0.28
0.42
0.50
T J = 25 ° C
250
—
T J = 125 ° C
0.13
0.33
0.45
T J = 125 ° C
—
25
Volts
m A
mA
Maximum Voltage Rate of Change
V R = 30 V
dV/dt
10,000
V/ m s
7. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
8. Switching characteristics are independent of operating junction temperature.
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