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| 型号： | MMDF2C03HDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CHAN 2A 30V 8SOIC |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 产品目录绘图： | MOSFET 8-SOIC |
| 标准包装： | 10 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.1A，3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 630pF @ 24V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | MMDF2C03HDR2GOSDKR |
MMDF2C03HD
Power MOSFET
2 Amps, 30 Volts
Complementary SO ? 8, Dual
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc-dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
http://onsemi.com
2 AMPERES, 30 VOLTS
R DS(on) = 70 m W (N-Channel)
R DS(on) = 200 m W (P-Channel)
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
N ? Channel
D
P ? Channel
D
Features
? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO-8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed, With Soft Recovery
? I DSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Mounting Information for SO-8 Package Provided
? This is a Pb ? Free Device
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted) (Note 1)
G
8
1
G
S
SO ? 8
CASE 751
STYLE 14
8
1
S
MARKING
DIAGRAM
D2C03
AYWW G
G
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Drain Current ? Continuous N ? Channel
P ? Channel
Drain Current ? Pulsed N ? Channel
P ? Channel
Operating and Storage Temperature Range
Total Power Dissipation @ T A = 25 ° C (Note 2)
Thermal Resistance, Junction ? to ? Ambient
(Note 2)
Symbol
V DSS
V GS
I D
I DM
T J , T stg
P D
R q JA
Value
30
± 20
4.1
3.0
21
15
? 55 to 150
2.0
62.5
Unit
Vdc
Vdc
A
° C
W
° C/W
D2C03 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
N ? Source 1 8 N ? Drain
N ? Gate 2 7 N ? Drain
P ? Source 3 6 P ? Drain
Single Pulse Drain ? to ? Source Avalanche E AS mJ
Energy ? Starting T J = 25 ° C
(V DD = 30 V, V GS = 5.0 V, Peak I L = 9.0 Apk,
L = 8.0 mH, R G = 25 W ) N ? Channel 324
(V DD = 30 V, V GS = 5.0 V, Peak I L = 6.0 Apk,
L = 18 mH, R G = 25 W ) P ? Channel 324
Max Lead Temperature for Soldering, 0.0625 ″ T L 260 ° C
from case. Time in Solder Bath is 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative signs for P ? Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
P ? Gate 4 5 P ? Drain
ORDERING INFORMATION
Device Package Shipping ?
MMDF2C03HDR2G SO ? 8 2500 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 8
1
Publication Order Number:
MMDF2C03HD/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2N02E | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
| MMDF2N02ER2 | 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2N02ER2G | 功能描述:MOSFET NFET SO8D 25V 3.6A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2N05ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
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