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参数资料
| 型号： | MMBF170W-7-F |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 116K |
| 代理商： | MMBF170W-7-F |
MMBF170W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
Mechanical Data
Case: SOT-323
Case Material - Molded Plastic. UL Flammability Rating
Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish). Please
see Ordering Information, Note 4, on Page 2
Terminal Connections: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
ADVAN
CE
I
N
F
O
RM
ATI
ON
Source
Gate
Drain
SOT-323
D
G
S
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
Pulsed
ID
500
800
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 1)
Pd
200
1.6
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RθJA
625
K/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current
IDSS
1.0
A
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
0.8
2.1
3.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
5.0
Ω
VGS = 10V, ID = 200mA
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
22
40
pF
Output Capacitance
Coss
11
30
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
ns
Turn-Off Delay Time
tD(OFF)
10
ns
VDD = 25V, ID = 0.5A,
VGS = 10V, RGEN = 50Ω
Notes:
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
MMBF170W
Document number: DS30493 Rev. 2 - 0
1 of 3
www.diodes.com
November 2007
Diodes Incorporated
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