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参数资料
| 型号： | MMBF170W-7-F |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 116K |
| 代理商： | MMBF170W-7-F |
MMBF170W
MMBF170W
Document number: DS30493 Rev. 2 - 0
2 of 3
www.diodes.com
November 2007
Diodes Incorporated
ADVAN
CE
I
N
F
O
RM
ATI
ON
0
0.2
0.4
0.6
0.8
1.0
01
2
3
45
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
V
= 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
GS
5.5V
10V
2.1V
5.0V
I,
D
R
AI
N
-S
O
U
R
C
E
C
U
R
EN
T
(A
)
D
0
1
2
3
4
5
00.2
R
,
N
O
R
MA
L
IZ
E
D
DRAI
N
-S
OURC
E
ON-
R
ESI
ST
ANCE
DS
(O
N)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
V
= 5.0V
GS
T = 25 C
j
°
V
= 10V
GS
6
7
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
-55
-30
-5
20
45
70
95
120
145
R
,
N
O
R
MA
L
IZ
E
D
DRAI
N
-S
OU
RCE
ON-
R
ESI
ST
AN
CE
DS
(O
N
)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
V
= 10V, I = 0.5A
GS
D
V
= 5.0V, I = 0.05A
GS
D
0
V
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I= 50mA
D
I = 500mA
D
1
2
3
4
5
6
0
2
4
6
8
10
1214
1618
R
,NORM
AL
IZ
E
D
DRAI
N
-S
OURCE
ON-
R
ESI
S
T
ANCE
DS
(O
N)
Ordering Information (Notes 3 and 4)
Part Number
Case
Packaging
MMBF170W-7
SOT-323
3000/Tape & Reel
Notes:
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For lead free version (with lead free terminal finish) part number, please add "-F" suffix to part number above. Example: MMBF170W-7-F.
Marking Information
K6Z
YM
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
Code
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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