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参数资料
| 型号： | MMBFJ111S62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件页数： | 2/5页 |
| 文件大小： | 68K |
| 代理商： | MMBFJ111S62Z |
J111
/
J112
/
J113
/
MMBFJ111
/
MMBFJ112
/
MMBFJ113
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, IGS = 0
J111
J112
J113
20
5.0
2.0
mA
rDS(on)
Drain-Source On Resistance
VDS
≤ 0.1 V, V
GS = 0
J111
J112
J113
30
50
100
SMALL-SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
28
pF
Cdg(off)
Drain-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
5.0
pF
Csg(off)
Source-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
5.0
pF
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 3.0%
Typical Characteristics
V(BR)GSS
Gate-Source Breakdown Voltage
IG = - 1.0
A, VDS = 0
- 35
V
IGSS
Gate Reverse Current
VGS = - 15 V, VDS = 0
- 1.0
nA
VGS(off)
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0
A
J111
J112
J113
- 3.0
- 1.0
- 0.5
- 10
- 5.0
- 3.0
V
ID(off)
Gate-Source Cutoff Voltage
VDS = 5.0 V, VGS = - 10 V
1.0
nA
r
-
DRA
IN
"
O
N"
RE
S
IS
T
A
NCE
(
)
Parameter Interactions
0.5
1
2
5
10
5
10
20
50
100
5
10
20
50
100
V
- GATE CUTOFF VOLTAGE (V)
g
-
T
R
AN
S
C
O
N
D
UCT
AN
CE
(
m
h
o
s
)
GS (OFF)
fs
I
, g
@ V
= 15V,
V
= 0 PULSED
r
@ 1.0 mA, V
= 0
V
@ V
= 15V,
I
= 1.0 nA
GS(off)
DSS
r
D
I
DSS
DS
GS
DS
GS
fs
DS
g
fs
_
__
_
Common Drain-Source
0
0.4
0.8
1.2
1.6
2
0
2
4
6
8
10
V
- DRAIN-SOURCE VOLTAGE (V)
I
-
DRAI
N
CURRE
NT
(
m
A
)
DS
D
- 0.4 V
- 1.0 V
- 0.8 V
- 0.2 V
- 0.6 V
V
= 0 V
GS
T
= 25°C
TYP V
= - 2.0 V
GS(off)
A
- 1.2 V
- 1.4 V
N-Channel Switch
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBFJ112 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ112_SB51338 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| MMBFJ113 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ113_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ175 | 功能描述:JFET P-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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