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参数资料
| 型号： | MMBFJ201D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件页数： | 1/13页 |
| 文件大小： | 851K |
| 代理商： | MMBFJ201D87Z |
5
G
D
S
J201
J202
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 52.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
MMBFJ201
MMBFJ202
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
N-Channel General Purpose Amplifier
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
40
V
VGS
Gate-Source Voltage
- 40
V
IGF
Forward Gate Current
50
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
SOT-23
Mark: 62P / 62Q
G
S
D
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
Symbol
Characteristic
Max
Units
J202-203
*MMBFJ202-203
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
J201
/
J202
/
MMBFJ201
/
MMBFJ202
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBFJ202 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ202_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ203 | 功能描述:JFET ELEC J203 MARKED 62R RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ210 | 功能描述:JFET N-Channel JFET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ210_Q | 功能描述:JFET N-Channel JFET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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