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参数资料
| 型号： | MMBFJ309D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 806K |
| 代理商： | MMBFJ309D87Z |
G
D
S
J309
J310
N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer
applications. As a common gate amplifier, 16 dB at 100 MHz and
12 dB at 450 MHz can be realized. Sourced from Process 92.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
MMBFJ309
MMBFJ310
Symbol
Parameter
Value
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
- 25
V
IGF
Forward Gate Current
10
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
SOT-23
Mark: 6U / 6T
G
S
D
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
J309
/
J310
/
MMBFJ309
/
MMBFJ310
Symbol
Characteristic
Max
Units
J309-J310
*MMBFJ309-310
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBFJ309L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | SOT-23 |
| MMBFJ309LT1 | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ309LT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET - VHF/UHF Amplifier Transistor N-Channel |
| MMBFJ309LT1G | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBFJ309LT1G | 制造商:ON Semiconductor 功能描述:RF JFET |
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