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参数资料
| 型号： | MMBFU310LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 12/35页 |
| 文件大小： | 372K |
| 代理商： | MMBFU310LT3 |
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MMBFU310LT1
4–187
Motorola Small–Signal Transistors, FETs and Diodes Device Data
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33
H Miller #9230–30.
L1 = One Turn #16 Cu, 1/4
″ I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).
50
SOURCE
50
LOAD
U310
C3
C2
C6
C7
C4
1.0 k
RFC
L1
L2P
L2S
+VDD
C1
C5
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
70
60
50
40
30
20
,SA
TURA
TION
DRAIN
CURRENT
(mA)
–5.0
–4.0
–3.0
–2.0
–1.0
0
ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)
I DSS
10
0
70
60
50
40
30
20
10
,DRAIN
CURRENT
(mA)
I D
IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
VDS = 10 V
IDSS
+25
°C
TA = – 55°C
+25
°C
+25
°C
–55
°C
+150
°C
+150
°C
VGS, GATE–SOURCE VOLTAGE (VOLTS)
5.0
4.0
3.0
2.0
1.0
0
35
30
25
20
15
10
5.0
0
,FOR
W
ARD
TRANSCONDUCT
ANCE
(mmhos)
Y fs
Figure 3. Forward Transconductance
versus Gate–Source Voltage
VDS = 10 V
f = 1.0 MHz
TA = – 55°C
+25
°C
+150
°C
+25
°C
–55
°C
+150
°C
ID, DRAIN CURRENT (mA)
100 k
10 k
1.0 k
100
1.0 k
100
10
1.0
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
,FOR
W
ARD
T
RANSCONDUC
TANC
E
(
m
hos
)
Y fs
,OUTPUT
ADMITT
ANCE
(
mhos)
Y os
VGS(off) = – 2.3 V =
VGS(off) = – 5.7 V =
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
Yfs
Yos
VGS, GATE SOURCE VOLTAGE (VOLTS)
5.0
4.0
3.0
2.0
1.0
0
6.0
7.0
8.0
9.0
10
CAP
ACIT
ANCE
(pF)
10
7.0
4.0
1.0
0
120
96
72
48
24
0
,ON
RESIST
ANCE
(OHMS)
R
DS
RDS
Cgs
Cgd
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source Voltage
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