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参数资料
| 型号： | MMBR951MLT1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/1页 |
| 文件大小： | 339K |
| 代理商： | MMBR951MLT1 |
PR
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IM
IN
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Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1 of 1
Copyright
2000
CXXXX.PDF 2000-11-06
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MMBR951MLT1/MRF9511MLT1
RF & MICROWAVE TRANSISTORS
R F P R O D U C T S D I V I S I O N
D E S C R I P T I O N
The MMBR951MLT1/MRF9511MLT1 are low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
K E Y F E A T U R E S
!
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
S
!
LNA, Oscillator, Pre-Driver
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Device Current
100
mA
PDISS
Power Dissipation
322
mW
TJ
Junction Temperature
150
C
TSTG
Storage Temperature
-55 to +150
C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
233
C/W
M
BR
95
1M
LT
1/M
R
F9
51
1M
LT
1
!
High FTau-8GHz
Low noise-1.3dB@1GHz
Low cost SOT23/SOT143
package
SOT-23
MMBR951MLT1
SOT-143
MRF9511MLT1
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
BVCBO
IC = .1mA
IE = 0
20
V
BVCEO
IC =.1mA
IB = 0
10
V
IEBO
VEB = 1V
IC = 0
0.1
uA
hFE
VCE = 6 V
IC = 5 mA
50
200
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
f = 1.0 MHz
VCB = 10 V
GHz
F
CB
C
FTau
NF
G
NFmin
P
.45
8.0
1.3
13.5
VCE = 6 V I = 30 mA
C
f = 1.0 GHz
VCE = 6 V I = 5 mA
C
f = 1.0 GHz
VCE = 6 V I = 5 mA
C
f = 1.0 GHz
S 212
VCE = 6 V I = 30 mA
C
f = 1.0 GHz
13.5
dB
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