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参数资料
| 型号： | MMBT2222AS62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 3/6页 |
| 文件大小： | 113K |
| 代理商： | MMBT2222AS62Z |
PN2222A
/
MMBT2222A
/
MMPQ2222
/
NMT2222
/
PZT2222A
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2222A
*PZT2222A
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
125
°C/W
Symbol
Characteristic
Max
Units
**MMBT2222A
MMPQ2222
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
1,000
8.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
°C/W
Typical Characteristics
NPN General Purpose Amplifier
(continued)
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
BA
SE-
EMI
TTER
ON
VOL
T
A
GE
(
V
)
BE
(O
N)
C
V
= 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
BA
SE-EM
IT
TER
V
O
L
T
A
G
E
(V)
BE
SA
T
C
β = 10
25 °C
125 °C
- 40 °C
Collector-Emitter Saturation
Voltage vs Collector Current
110
100
500
0.1
0.2
0.3
0.4
I
- COLLECTOR CURRENT (mA)
V
-COLL
ECT
O
R
-EMI
T
TER
VOL
T
A
G
E
(V
)
CES
A
T
25 °C
C
β = 10
125 °C
- 40 °C
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L
P
U
LS
ED
CU
RRENT
GA
IN
C
FE
125 °C
25 °C
- 40 °C
V
= 5V
CE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222AT | 功能描述:两极晶体管 - BJT NPN GENERAL PURPOSE AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222A-T | 功能描述:两极晶体管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222AT_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2222AT_10 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Plastic-Encapsulate Transistors NPN Silicon |
| MMBT2222AT_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN General Purpose Amplifier |
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