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参数资料
| 型号： | MMBT2222AS62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 4/6页 |
| 文件大小： | 113K |
| 代理商： | MMBT2222AS62Z |
PN2222A
/
MMBT2222A
/
MMPQ2222
/
NMT2222
/
PZT2222A
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
COLL
ECT
O
R
CURRE
NT
(nA
)
A
V
= 40V
CB
O
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1
1
10
100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E
(
p
F
)
f = 1 MHz
C ob
C te
Turn On and Turn Off Times
vs Collector Current
10
100
1000
0
80
160
240
320
400
I
- COLLECTOR CURRENT (mA)
TI
M
E
(n
S)
I
= I
=
t on
t off
B1
C
B2
I c
10
V
= 25 V
cc
Switching Times
vs Collector Current
10
100
1000
0
80
160
240
320
400
I
- COLLECTOR CURRENT (mA)
TI
ME
(n
S
)
I
= I
=
t r
t s
B1
C
B2
I c
10
V
= 25 V
cc
t f
t d
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
DIS
S
IP
A
T
IO
N
(W
)
D
o
SOT-223
TO-92
SOT-23
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222AT | 功能描述:两极晶体管 - BJT NPN GENERAL PURPOSE AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222A-T | 功能描述:两极晶体管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222AT_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2222AT_10 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Plastic-Encapsulate Transistors NPN Silicon |
| MMBT2222AT_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN General Purpose Amplifier |
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