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参数资料
| 型号： | MMBT2369AD87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 7/14页 |
| 文件大小： | 749K |
| 代理商： | MMBT2369AD87Z |
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 0
15
V
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 10
A, V
BE = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
4.5
V
ICBO
Collector Cutoff Current
VCB = 20 V, IE = 0
VCB = 20 V, IE = 0, TA = 125
°C
0.4
30
A
ON CHARACTERISTICS
hFE
DC Current Gain*
IC = 10 mA, VCE = 1.0 V
IC = 10 mA,VCE = 0.35 V,TA =-55
°C
IC = 100 mA, VCE = 1.0 V
40
20
120
VCE(sat)
Collector-Emitter Saturation Voltage*
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA,TA =125
°C
IC = 30 mA, IB = 3.0 mA
IC = 100 mA, IB = 10 mA
0.2
0.3
0.25
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA,TA = -55
°C
IC = 10 mA, IB = 1.0 mA,TA= 125
°C
IC = 30 mA, IB = 3.0 mA
IC = 100 mA, IB = 10 mA
0.7
0.59
0.85
1.02
1.15
1.6
V
Symbol
Parameter
Test Conditions
Min
Max
Units
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0, f = 1.0 MHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0, f = 1.0 MHz
5.0
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
RG = 2.0 k
, f = 100 MHz
5.0
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
ts
Storage Time
IB1 = IB2 = IC = 10 mA
13
ns
ton
Turn-On Time
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA
12
ns
toff
Turn-Off Time
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA, IB2 = 1.5 mA
18
ns
PN2369A
/
MMBT2369A
NPN Switching Transistor
(continued)
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| MMBT2369AL | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 |
| MMBT2369ALT1 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369ALT1G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369ALT3 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369ALT3G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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